Part number:
G2K2P10D3E
Single FETs, MOSFETs
Manufacturer:
Goford Semiconductor
MOSFET P-CH ESD 100V 10A DFN3*3-
Tape & Reel (TR)
RoHS:
YES
G2K2P10D3E
: 1
: 1
1
$1.1600
$1.1600
10
$0.9800
$9.8000
100
$0.6800
$68.0000
500
$0.5400
$270.0000
1000
$0.4400
$440.0000
2000
$0.3800
$760.0000
5000
$0.3600
$1,800.0000
10000
$0.3400
$3,400.0000
25000
$0.3400
$8,500.0000
50000
$0.3200
$16,000.0000
G2K2P10D3E
PDF1
| TYPE | DESCRIPTION |
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 6A, 10V |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (3.15x3.05) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1668 pF @ 50 V |
